Principal Design Engineer

Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers' most complex technical challenges. Qorvo serves multiple high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare and aerospace/defense. Visit www.qorvo.com to learn how our innovative team is helping connect, protect and power our planet.

Locations considered for this role: San Jose, CA or Cedar Rapids, IA.

POSITION DESCRIPTION

We are looking for an experienced RF power amplifier (PA) design engineer in our advanced development team who will deliver new and innovative solutions for cellular and Wi-Fi applications in frequency range from 700 MHz to 7 GHz. The successful candidate will be responsible for the feasibility study, design, simulation, and layout of the GaAs PA IC as well as the accompanying laminate/IPD based matching networks using ADS and various EM simulation tools to meet simultaneous power, bandwidth, efficiency, and linearity requirements. This position also requires hands-on RF tuning skills at the bench alongside technicians and applications engineers to optimize the PA performance, and extensive data analysis skills to validate the design over PVT and VSWR. The successful candidate is also expected to mentor others in design concepts and best practices, and publish novel design work through internal/external reports, seminars, conferences and invention disclosures. This is a high visibility position and you will have the opportunity to interface with various product organizations and cross-functional teams in the company.

Requirements:

• Demonstrated experience in cellular or Wi-Fi PA design using GaAs HBT based technologies.
• Strong understanding of various high-efficiency and high-linearity PA design techniques and architectures including load and supply modulation.
• Solid knowledge of GaAs HBT device physics over temperature, voltage/current and frequency.
• Extensive experience in linear/nonlinear ADS simulations, and EM simulations through FEM, Momentum and/or HFSS.
• Strong background in RF/microwave engineering, electromagnetics, analog circuits and wireless communications.
• Must be experienced with RF/microwave test equipment such as network analyzer, probe station, source/load pull system, and signal sources/analyzers that deal with modulated signals.
• Strong teamwork, communication, organization, and documentation skills.
• Ability to work in a fast-paced environment to meet customer needs and schedules.
• Detail oriented to ensure delivery of high yielding designs with good margin to specifications.
• Bachelor's degree with 8+ years of related work experience and/or post-graduate degree is required.

Desired Qualifications:

• Experience designing RFIC/MMIC and analog circuit blocks such as PAs, switches, LNAs, phase shifters, and/or attenuators using pHEMT, SiGe and/or SOI/CMOS-based technologies.
• Experience with various PA linearization techniques.
• Knowledge of Cadence and AWR Microwave Office schematic capture, layout and simulation tools is a plus.
• Knowledge of data analysis and programming tools such as MATLAB, JMP, Spotfire, and AEL is a plus.
• Published authorship in technical journals, conferences and/or magazines.
• 15+ years of experience with M.S. or Ph.D. degrees is preferred.

Competitive base salary commensurate with experience: $170,300.00 - $221,500.00, relevant for the California Bay Area (subject to change dependent on physical location)